Póster 155, Idioma: AlemánDietrich, Michael/Arnold, Wolfgang H./Braasch, Volker/Grimm, Wolf-DieterIntroduction: The surface characteristics of Ti-Implants have a direct influence on the proliferation and differentiation of the subepithelial-gingival as well as the periodontal-enossal fibroblasts. Therefore the structure of this surface influences the quality of the mucosal interface and the osseointegration of the implant.
The aim of this study is to review the ultrastructure and chemical composition of Ti-Implant systems.
Material and methods: The mucosal and enossal compartments of 10 Ti-Implants with different surface characteristics (acid-etched, machined screw, TPS-coated) were examined by a REM in a 2000x magnification. EDX analyses were made to evaluate the chemical composition. The roughness and hardness of the surface was measured in comparable regions of the mucosal and enossal compartment. Grade 1 and 4 Titanium is used in all implant systems.
Results: The ultrastructure of the mucosal interface shows the characteristic turning pattern with depths up to 15µm. The surfaces show different fracturing of metal chips and pitting attack. From the REM analyses it appears as if the diameter of the pits varies in the range of 0,1µm to 10µm. That suggests that the light particles are formed during turning and are loosely bond to the surface. The surface of the enossal regions show different patterns depending on the technology of manufacture. The surface of the mucosal regions show a roughness of 0,47-2,88µm, the enossal regions from 5,8 to 1,43µm. The hardness of the tested Ti-implant systems was measured between 1674 und 23330 N/mm2. The EDX analysis shows, that the chemical composition of the enossal spots was Ti: 90,9-100,0%; Al:8,90%; Cl 8,57%. At the mucosal surfaces there was mainly Titanium detected.
Conclusion: There must be demands for the transmucosal surface structure to provide the epithelial and mucosal attachement.
Palabras clave: dental implants, surface pattern, ultrastructure, chemical composition
